A bioinspired optoelectronically engineered artificial neurorobotics device with sensorimotor functionalities

Development of the next generation of bio- and nano-electronics is inseparably connected to the innovative concept of emulation and reproduction of biological sensorimotor systems and artificial neurobotics. Here, we report for the first time principally new artificial bioinspired optoelectronic sensorimotor system for the controlable immitation of opto-genetically engineered neurons in the biological motor system. The device is based on inorganic optical synapse (In-doped TiO2 nanofilm) assembled into a liquid metal (galinstan) actuator. The optoelectronic synapse generates polarised excitatory and inhibitory postsynaptic potentials to trigger the liquid metal droplet to vibrate and then mimic the expansion and contraction of biological fibre muscle. The low-energy consumption and precise modulation of electrical and mechanical outputs are the distinguished characteristics of fabricated sensorimotor system. This work is the underlying significant step towards the development of next generation of low-energy the internet of things for bioinspired neurorobotic and bioelectronic system

Optoelectronic nociceptive sensors based on heterostructured semiconductor films

A visible light optical nociceptive sensor was developed based on the heterostructured plasmonic Au/G2O3/TiO2 semiconductor films. The incorporation of nitrogen atoms and the following phase transformation of G2O3 ultra-thin film during rapid thermal annealing enabled the nociceptive characteristics in heterostructured G2O3/TiO2 plasmonic visible light sensor. The fabricated nociceptor showed the post-synaptic current, nociceptive threshold and non-adaption modes in normal states

Metal/semiconductor hetero-interface engineering for photocurrent controlling in plasmonic photodetectors

The heterointerface engineering at metal/semiconductor (MS) hetero-interfaces in Au/Ga2O3/TiO2 plasmonic photosensors enabled the modulation of charge transfer and photoconductance of detectors for adaptive perception of visible optical lights. The photoconductance at heterointerface between plasmonic Au antenna and main TiO2 semiconductor was modulated by deposition of ultra-thin Ga2O3 film at the Au/TiO2 hetero-interface. The fast and improved photoresponsivity were achieved by the surface functionalization of Au plasmonic antenna with N2 doped Ga2O3 ultra-thin film

Nanoscale all-oxide-heterostructured bio-inspired optoresponsive nociceptor

Retina nociceptor, as a key sensory receptor, not only enables the transport of warning signals to the human central nervous system upon its exposure to noxious stimuli, but also triggers the motor response that minimizes potential sensitization. In this study, the capability of two-dimensional all-oxide-heterostructured artificial nociceptor as a single device with tunable properties was confirmed. Newly designed nociceptors utilize ultra-thin sub-stoichiometric TiO2-Ga2O3 heterostructures, where the thermally annealed Ga2O3 films play the role of charge transfer controlling component. It is discovered that the phase transformation in Ga2O3 is accompanied by substantial jump in conductivity, induced by thermally assisted internal redox reaction of Ga2O3 nanostructure during annealing. It is also experimentally confirmed that the charge transfer in all-oxide heterostructures can be tuned and controlled by the heterointerfaces manipulation. Results demonstrate that the engineering of heterointerfaces of two-dimensional (2D) films enables the fabrication of either high-sensitive TiO2-Ga2O3 (Ar) or high-threshold TiO2-Ga2O3 (N-2) nociceptors. The hypersensitive nociceptor mimics the functionalities of corneal nociceptors of human eye, whereas the delayed reaction of nociceptor is similar to high-threshold nociceptive characteristics of human sensory system. The long-term stability of 2D nociceptors demonstrates the capability of heterointerfaces engineering for effective control of charge transfer at 2D heterostructured devices

2D semiconductor nanomaterials and heterostructures : controlled synthesis and functional applications

Two-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals

Nanostructure-induced performance degradation of WO3·nH2O for energy conversion and storage devices

Although 2D layered nanomaterials have been intensively investigated towards their application in energy conversion and storage devices, their disadvantages have rarely been explored so far especially compared to their 3D counterparts. Herein, WO3 center dot nH(2)O (n = 0, 1, 2), as the most common and important electrochemical and electrochromic active nanomaterial, is synthesized in 3D and 2D structures through a facile hydrothermal method, and the disadvantages of the corresponding 2D structures are examined. The weakness of 2D WO3 center dot nH(2)O originates from its layered structure. X-ray diffraction and scanning electron microscopy analyses of as-grown WO3 center dot nH(2)O samples suggest a structural transition from 2D to 3D upon temperature increase. 2D WO3 center dot nH(2)O easily generates structural instabilities by 2D intercalation, resulting in a faster performance degradation, due to its weak interlayer van der Waals forces, even though it outranks the 3D network structure in terms of improved electronic properties. The structural transformation of 2D layered WO3 center dot nH(2)O into 3D nanostructures is observed via ex situ Raman measurements under electrochemical cycling experiments. The proposed degradation mechanism is confirmed by the morphology changes. The work provides strong evidence for and in-depth understanding of the weakness of 2D layered nanomaterials and paves the way for further interlayer reinforcement, especially for 2D layered transition metal oxides

Tailoring two-dimensional semiconductor oxides by atomic layer deposition

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